EMP108 updated 04/04/2008 7. 0 ? 9.5 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised april 2008 dimension: 1130um x 2250um thickness: 75um + 13um features ? 7.0 ? 9.5 ghz operating frequency range ? 24.0dbm output power at 1db compression ? 19.0 db typical small signal gain ? -40dbc oimd3 @each tone pout 14dbm applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics (t a = 25 c, 50 ohm, vdd= 7 v, idq= 200 ma) symbol parameter/test conditions min typ max units f operating frequency range 7.0 9.5 ghz p1db output power at 1db gain compression 22.5 24.0 dbm gss small signal gain 16.0 19.0 db oimd3 output 3 rd order intermodulation distortion @ ? f=10mhz, each tone pout 14dbm -40 -38 dbc input rl input return loss -10 db output rl output return loss -5 db idss saturate drain current v ds =3v, v gs =0v 225 305 366 ma v dd power supply voltage 7 8 v rth thermal resistance (au-sn eutectic attach) 30 o c/w tb operating base plate temperature - 35 + 85 oc absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 8 v v gs gate to source voltage - 4 v i dd drain current idss i gsf forward gate current 4.5 ma p in input power @ 3db compression t ch channel temperature 150c t stg storage temperature -65/150c p t total power dissipation 3.8w 1. operating the device beyond any of the above rating may result in permanent damage. 2. bias conditions must also satisfy the following equation v ds *i ds < (t ch ?t hs )/r th ; where t hs = ambient temperature
EMP108 updated 04/04/2008 7. 0 ? 9.5 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised april 2008 assembly drawing the length of rf wires should be as short as possible. use at least two wires between rf pad and 50 ohm line and separate the wires to minimize the mutual inductance. chip size 1130 x 2250 microns chip thickness: 75 13 microns pad dimensions: 100 x 100 microns all dimensions in microns chip outline
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